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revisions ltr description date ( yr -mo -da ) approved a changes in accordance with nor 5962-r208-93. 93-08-06 monica l. poelking b changes in accordance with nor 5962-r187-94. 94-06-08 monica l. poelking c add device type 02. editorial changes throughout. 96-01-05 monica l. poelking d changes in accordance with nor 5962-r299-97. 97-05-29 monica l. poelking e add device type 03. editorial changes throughout. - tvn 98-06-29 monica l. poelking f in table ia: add test conditions for i in ; change the limits for q idd ; remove the test condition v dd = 4.5 v for all the propagation delay tests; change the limits for t a and t i in memory read timing section; change the limits of t c in dma timing section; and change the limit of t a in jtag timing section. include pin connections for case outlines x and z in radiation exposure connections. editorial changes throughout. - tvn 98-09-18 monica l. poelking g in table i, change i in limits; add a footnote to q idd ; add t c in power-up master reset timing section. correct the jtag timing waveforms. ? tvn 99-05-26 monica l. poelking h add device type 04. editorial changes throughout. ? tvn 00-07-18 monica l. poelking j add notes to memory write and memory read waveforms. add figure b -1 to appendix a. editorial changes throughout. ? tvn 01-03-15 thomas m. hess rev j h h h h h h h h h j j j j j j j j j sheet 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 rev e e e e h e j g e g h h e e e f f g h j sheet 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 rev j h h h h h h h h h h e e e rev status of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by thomas m. hess checked by thomas m. hess defense supply center columbus columbus, ohio 43216 http://www.dscc.dla.mil approved by monica l. poelking drawing approval date 93-06-07 microcircuit, digital, cmos, mil -std -1553 serial microcoded monolithic multi -mode intelligent terminal, monolithic silicon size a cage code 67268 5962 -92118 standard microcircuit drawing this drawing is available for use by all departments and agencies of the department of defense amsc n/a revision level j sheet 1 of 45 dscc form 2233 apr 97 5962 -e271-01 distribution statement a . approved for public release; distribution is unlimited.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class levels consisting of high reliability (device classes q and m) and space application (device class v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following example: 5962 h 92118 01 v x x federal rha device device case lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes q and v rha marked devices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. device class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropriate rha designator. a dash ( -) indicates a non -rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 ut69151 mil-std-1553 bus controller, remote terminal, monitor interface 02 ut69151e mil-std-1553 bus controller, remote terminal, monitor interface radiation hardened 03 ut69151e mil-std-1553 bus controller, remote termina l, monitor interface 04 ut69151e mil-std-1553 bus controller, remote terminal, monitor interface radiation hardened 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self -certification to the requirements for mil-std-883 compliant, non -jan class level b microcircuits in accordance with mil-prf-38535, appendix a q or v certification and qualification to mil-prf-385 35 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style x cmga3 -p84 84 pin grid array y see figure 1 84 leaded chip carrier z see figure 1 132 leade d chip carrier with unformed leads, nonconductive tier bar 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / supply voltage range (v dd ) ................................ ................................ .............. -0.3 v dc to +7.0 v dc voltage on any pin ................................ ................................ .......................... -0.3 v dc to v cc + 0.3 v dc latchup immunity (i lu ) ................................ ................................ .................... 150 ma dc input current (i i ) ................................ ................................ ......................... 10 ma maximum power dissipation (p d ) ................................ ................................ ..... 2.5 w storage temperature range (t stg ) ................................ ................................ .... -65 c to +150 c lead temperature (soldering, 5 seconds) ................................ ......................... +300 c thermal resistance, junction-to-case ( q jc ) ................................ ....................... 15 c/w maximum junction temperature (t j ) ................................ ................................ . 175 c 1.4 recommended operating conditions . supply voltage range (v dd ) ................................ ................................ .............. +4.5 v dc to +5.5 v dc dc input voltage (v in ) ................................ ................................ ...................... 0 v dc to v dd maximum input voltage (v il) ................................ ................................ ............ 0.8 v dc maximum input voltage, 24 mhz input (v ilc ) ................................ .................... 0.3 v dd minimum input voltage (v ih ) ................................ ................................ ............ 2.2 v dc minimum input voltage, 24 mhz input (v ihc ) ................................ .................... 0.7 v dd operating frequency (f in ) ................................ ................................ ................. 24 0.01% mhz duty cycle (d c ) ................................ ................................ ................................ 50 5% case operating temperature range (t c ) ................................ ........................... -55 c to +125 c radiation features: total dose: device type 02 ................................ ................................ ...................... 3 1 x 10 6 rads (si) device type 04 ................................ ................................ ...................... = 300k rads (si) single event phenomenon (sep) effective let, no upsets: device type 02 ................................ ................................ ............... = 47 mev/(mg/cm 2 ) device ty pe 04 ................................ ................................ ............... < 14.4 mev/(mg/cm 2 ) let, no latchup: device type 02 ................................ ................................ ............... > 136 mev/(mg/cm 2 ) device type 04 ................................ ................................ ............... > 128 mev/(mg/cm 2 ) dose rate upset (20 ns pulse) ................................ ................................ .... 2 / dose rate latchup ................................ ................................ ...................... 2 / dose rate survivability ................................ ................................ ............... 2 / neutron irradiated ................................ ................................ ...................... 2 / 1.5 digital logic testing for device classes q and v . fault coverage measurement of manufacturing logic tests (mil -std -883, test method 5012) ................................ ................ 95.12 percent 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation. 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliability. 2 / when chara cterized as a result of the procuring activities request, the condition will be specified.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 4 dscc form 2234 apr 97 specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil -std - 883 - test methods and procedures for microelectronics. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings (smd's). mil -hdbk -780 - standard microc ircuit drawings. (unless otherwise indicated, copies of the specification, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 non -government publicatio ns . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the issues of the documents which are dod adopted are those listed in the issue of the dodiss cited in the solicitation. unless otherwise specified, the issues of documents not listed in the dodiss are the issues of the documents cited in the solicitation. institute of electrical and electronics engineers (ieee) ieee standard 1149.1 - ieee standard test access port and boundary scan architecture. (applications for copies should be addressed to the institute of electrical and electronics engineers, 445 hoes lane, piscataway, nj 08854-4150.) (non-government standards and other publications are normally available from the organizatio ns that prepare or distribute the documents. these documents may also be available in or through libraries or other informational sevices.) 2.3 order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein. 3.1.1 microcircuit die . for the requirements for microcircuit die, see appendix a to this document. 3.2 design, construction, and physical dimensions . the design, construction, and physical dimensions shall be as specified in mil-prf-38535 and herein for device classes q and v or mil-prf-38535, appendix a and herein for device class m.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 5 dscc form 2234 apr 97 3.2.1 case outlines . the case outlines shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 terminal connections . the terminal connections shall be as specified on figure 2. 3.2.3 block diagram . the block diagram shall be as specified on figure 3. 3.2.4 boundary scan instruction codes . the boundary scan instruction codes shall be as specified on figure 4. 3.2.5 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified on figures 5 through 13. 3.2.6 radiation exposure connections . the radiation exposure connecttions shall be as specified on figure 14. 3.3 electrical performance characteristics and postirradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table ia and shall apply over the full case operating temperature range. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in table iia. the electrical tests for each subgroup are defined in table ia. 3.5 marking . the part shall be marked with the pin listed in 1.2 herein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for packages where marking of the entire smd pin number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classes q and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes q and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for device class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes q and v, a certificate of compliance shall be required from a qml -3853 5 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certificate of compliance submitted to dscc -va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes q and v, the requirements of mil-prf- 38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc -va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offshore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 105 (see mil-prf-38535, appendix a). 3.11 ieee 1149.1 compliance . theses devices shall be compliant with ieee 1149.1.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 6 dscc form 223 4 apr 97 table ia. electrical performance characteristics . limits test symbol test conditions 1 / -55 c t c +125 c 4.5 v v dd 5.5 v unless otherwise specified device type group a subgroups min max unit low level input voltage, except tck input v il1 all 1, 2, 3 0.8 01, 02 04 0.8 low level input voltage, tck input only v il2 03 1, 2, 3 0.7 high level input voltage v ih all 1, 2, 3 2.2 low level input voltage v ilc all 1, 2, 3 0.3v dd high level intput voltage v ihc 24 mhz input only all 1, 2, 3 0.7v dd i ol = 4.0 ma 0.4 low level output voltage v ol outputs loads i ol = 1.0 m a 2 / all 1, 2, 3 0.05 i oh = 4.0 ma 2.4 high level output voltage v oh outputs loads i oh = 1.0 m a 2 / all 1, 2, 3 v dd -0.05 v ttl driven inputs v in = v dd or v ss all 1, 2, 3 -10 +10 v in = v dd all -10 +10 01, 02 04 -900 -150 input leakage current i in inputs with pull -up resistors v in = v ss 03 1, 2, 3 -167 -27 m a three -state output leakage current, ttl loaded outputs i oz single -drive buffer v o = v dd or v ss all 1, 2, 3 -10 +10 m a short -circuit output current, output loads i os 2 / 3 / single -drive b uffer v dd = 5.5 v, v o = 0 v all 1, 2, 3 -100 +100 ma input capacitance c in all 4 15 output capacitance c out all 4 15 bidirectional capacitance c io f = 1 mhz at 0 v see 4.4.1c all 4 25 pf 1, 3 35 m a f = 0 mhz 5 / 01, 02 03 2 1 ma 1, 3 35 m a pre-irradiation level r 04 2 1 ma 1, 3 35 m a quiescent current 4 / q idd pre-irradiation level f 04 2 5 ma standby operating current s idd f = 24 mhz all 1, 2, 3 40 ma functional tests see 4.4.1b all 7, 8 see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 7 dscc form 223 4 apr 97 table ia. electrical performance characteristics - continued. limits test symbol test conditions 1 / -55 c t c +125 c 4.5 v v dd 5.5 v unless otherwise specified device type group a subgroups min max unit register write timing address setup time 6 / t a all 9, 10, 11 0 data setup time 6 / t b all 9, 10, 11 10 data hold time 6 / t c all 9, 10, 11 8 address hold time 6 / t d all 9, 10, 11 8 cs (l) to cs (h) 6 / t e all 9, 10, 11 105 access delay 6 / 7 / 8 / t f all 9, 10, 11 85 rd/ wr assertion to cs assertion 2 / t g all 9, 10, 11 0 cs negation to rd/ wr negation 2 / t h all 9, 10, 11 0 cs assertion to output enable 6 / t i all 9, 10, 11 0 40 cs negation to output three -state 2 / t j c l = 35 pf minimum see figures 5 and 12 all 9, 10, 11 5 35 ns register read timing address setup time 6 / t a all 9, 10, 11 0 cs assertion to output enable data valid 6 / t b all 9, 10, 11 95 cs negation to output disabled 2 / t c all 9, 10, 11 5 35 address hold time 6 / t d all 9, 10, 11 0 cs assertion to output enable data invalid 6 / t e all 9, 10, 11 0 40 access delay 6 / 7 / 8 / t f all 9, 10, 11 45 cs (l) to cs (h) 2 / t g c l = 35 pf minimum see figures 6 and 12 all 9, 10, 11 105 ns memory write timing 01, 02 04 9, 10, 11 0 18 address propagation delay t a 03 9, 10, 11 0 21 address valid to rcs , rwr assertion 6 / t b c l = 35 pf minimum see figures 7 and 12 all 9, 10, 11 15 35 ns see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 8 dscc form 223 4 apr 97 table ia. electrical performance characteristics - continued. limits test symbol test conditions 1 / -55 c t c +125 c 4.5 v v dd 5.5 v unless otherwise specified device type group a subgroups min max unit memory write timing ? continued dtack setup time 6 / t c all 9, 10, 11 10 rcs and rwr hold time 6 / 9 / t d all 9, 10, 11 20 50 data propagation delay 6 / t e all 9, 10, 11 20 60 address hold time 6 / t g all 9, 10, 11 10 30 dtack hold time 6 / t h all 9, 10, 11 10 01, 02 04 9, 10, 11 34 rwr and rcs pulse width ( dtack tied to ground) t i 03 9, 10, 11 32 rwr and rcs - to dmack - 2 / 9 / t j all 9, 10, 11 15 125 data hold time 2 / t k c l = 35 pf minimum see figures 7 and 12 all 9, 10, 11 10 40 ns memory read timing 01, 02 04 9, 10, 11 0 18 address propagation delay t a 03 9, 10, 11 0 21 address valid to rcs , rrd assertion 6 / t b all 9, 10, 11 15 35 dtack setup time 6 / t c all 9, 10, 11 10 rcs and rrd hold time 6 / 9 / t d all 9, 10, 11 20 50 01, 02 04 9, 10, 11 12 data setup delay 6 / t e 03 9, 10, 11 10 01, 02 04 9, 10, 11 0 data hold delay t f 03 9, 10, 11 2 address hold time 6 / t g all 9, 10, 11 10 30 dtack hold time t h all 9, 10, 11 10 01, 02 04 9, 10, 11 34 rrd and rcs pulse width ( dtack tied to ground) t i 03 9, 10, 11 32 rrd and rcs - to dmack - 2 / t j c l = 35 pf minimum see figures 8 and 12 all 9, 10, 11 15 45 ns see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 9 dscc form 223 4 apr 97 table ia. electrical performance characteristics - continued. limits test symbol test conditions 1 / -55 c t c +125 c 4.5 v v dd 5.5 v unless otherwise specified device type group a subgroups min max unit dma timing teract assertion to dmar assertion 2 / t a c l = 35 pf minimum see figures 9 and 12 all 9, 10, 11 5 01 9, 10, 11 7 bus controller 02, 03 04 9, 10, 11 16 remote terminal all 9, 10, 11 7 remote terminal with monitor all 9, 10, 11 7 dmar assertion to dmack negation 2 / t b monitor all 9, 10, 11 7 m s 01, 02 04 9, 10, 11 0 30 dmag assertion to dmack assertion 6 / t c 03 9, 10, 11 5 30 dmag assertion to dmar negation 2 / t d all 9, 10, 11 0 35 01, 02 04 9, 10, 11 0 5 dmack assertion to address bus active t e 03 9, 10, 11 -5 5 dmack assertion to dmag negation 6 / t f all 9, 10, 11 10 dmack negation to dmag assertion 2 / t g all 9, 10, 11 500 01, 02 04 9, 10, 11 0 5 dmack assertion to ram control active (negated) t h 03 -5 5 dmack negation to address three -state 2 / t i all 9, 10, 11 5 dmack assertion to ram control disabled 2 / t j all 9, 10, 11 5 ns power -up master reset timing mrst pulse width 2 / t a all 9, 10, 11 500 ns mrst negation to romen assertion 2 / t b all 9, 10, 11 5 m s mrst negation to ready assertion 2 / t c all 9, 10, 11 10 m s dmack negation to romen negation 2 / t d c l = 35 pf minimum see figures 10 and 12 all 9, 10, 11 500 ns see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 10 dscc form 223 4 apr 97 table ia. electrical performance characteristics - continued. limits test symbol test conditions 1 / -55 c t c +125 c 4.5 v v dd 5.5 v unless otherwise specified device type group a subgroups min max unit biphase timing biphase output skew t a all 9, 10, 11 10 biphase input skew (low to high) 2 / t b all 9, 10, 11 250 biphase input skew (high to low) 2 / t c all 9, 10, 11 250 biphase input pulse width 2 / t d c l = 35 pf minimum see figures 11 and 12 all 9, 10, 11 250 ns jtag timing tck frequency all 9, 10, 11 1 mhz tck period t a all 9, 10, 11 1000 tck high time t b all 9, 10, 11 1/2t a tck low time t c all 9, 10, 11 1/2t a tck rise time t d all 9, 10, 11 5 tck fall time t e all 9, 10, 11 5 tdi, tms setup time t f all 9, 10, 11 250 tdi, tms hold time t g all 9, 10, 11 250 tdo valid delay t h see figure 13 all 9, 10, 11 250 ns 1 / device type 02 supplied to this drawing will meet all levels m, d, l, r, f, g and h of irradiation. however, this device is only tested at the 'h' level. device type 04 supplied to this drawing will meet levels r and f of irradiation and will only be tested at the levels suplied. pre and post irradiation values are identical unless otherwise specified in table ia. when performing post irradiation electrical measurements for any rha level, t a = +25 c. unless otherwise specified, all testing shall be conducted under worst-case conditions. "gnd" may not vary from 0 v dc by more than 50 mv. 2 / this parameter is guaranteed, but not tested, to the values in table ia herein. 3 / tested one output at a time for a maximum duration of 1 second. 4 / devi ce type 02 post irradiation limit is 1 ma for subgroup 1. device type 04 post irradiation limit is 1 ma irradiation level r and 5 ma irradiation level f for subgroup 1. 5 / tested with all inputs tied to v dd . 6 / for device type 03, this parameter is guar anteed, but not tested, to the values in table ia herein. 7 / minimum pulse width from latter rising edge of rd/ wr or cs to first falling edge. 8 / read cycle followed by a read cycle - minimum 45 ns. read cycle f ollowed by a write cycle - minimum 45 ns. write cycle followed by a read cycle - minimum 85 ns. write cycle followed by a write cycle - minimum 85 ns. 9 / pulse width duration is measured with respect to the device's recognition of dtack assertion.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 11 dscc form 223 4 apr 97 table ib. sep test limits . 1 / 2 / v dd = 4.5 v device type t a = temperature 10 c effective let no upsets [mev/(mg/cm 2 )] maximum device cross section let 3 / bias for latch -up test v dd = 5.5 v no latch -up let = 4 / 02 +25 c = 47 1.6 x 10 -3 cm 2 > 136 04 +25 c < 14.4 1.5 x 10 -4 cm 2 > 128 1 / for sep test conditions, see 4.4.4.4. 2 / technology characterization and model verfication supplemented by in -line data may be used in lieu of end -of -line testing. test plan must be appro ved by trb and qualifying activity. 3 / let = 136 for device type 02 and let = 128 for device type 04. 4 / test at worst case temperature t a = +125 c.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 12 dscc form 2234 apr 97 case y figure 1. case outline.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 13 dscc form 2234 apr 97 case y millimeters inches symbol min nom max min nom max a 3.30 0.130 a1 2.03 2.74 0.080 0.108 b .36 .46 0.014 0.018 c .15 .20 0.006 0.008 e 1.27 0.50 d/e 28.91 29.52 1.138 1.162 hd/he 45.59 46.36 1.795 1.825 l .66 0.026 s1 .13 0.005 n 84 84 figure 1. case outline - continued.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 14 dscc form 2234 apr 97 case z figure 1. case outline - continued.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 15 dscc form 2234 apr 97 device type all case outline x terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol a1 rrd b11 romen f9 v dd k2 timerona a2 a0 c1 d15 f10 v ss k3 ta a3 a1 c2 tclk f11 dmack k4 ra a4 a3 c5 24 mhz g1 d8 k5 tb a5 a6 c6 v dd g2 d7 k6 tb a6 a4 c7 a9 g3 d6 k7 ready a7 a7 c10 cs g9 tdo k8 rta3 a8 a10 c11 autoen g10 tdi k9 rta0 a9 a12 d1 d13 g11 tms k10 lock a10 a13 d2 d14 h1 d5 k11 msel1 a11 rd/ wr d10 yf_ int h2 d4 l1 d0 b1 dtack d11 msg_ int h10 mrst l2 ta b2 rcs e1 d10 h11 trst l3 ra b3 rwr e2 d11 j1 d3 l4 timeronb b4 a2 e3 v dd j2 d1 l5 rb b5 a5 e9 tck j5 rb l6 v dd b6 v ss e10 dmag j6 v ss l7 teract b7 a8 e11 dmar j7 ssysf l8 rta4 b8 a11 f1 d9 j10 a/ b std l9 rta2 b9 a14 f2 d12 j11 msel0 l10 rta1 b10 a15 f3 v ss k1 d2 l11 rtpty figure 2. terminal connections .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 16 dscc form 2234 apr 97 device type all case outline y terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol 1 rcs 22 timerona 43 lock 64 a15 2 tclk 23 ta 44 a/ b std 65 a14 3 dtack 24 ta 45 msel1 66 a13 4 d15 25 ra 46 msel0 67 a12 5 d14 26 ra 47 mrst 68 a11 6 d13 27 timeronb 48 trst 69 a10 7 d12 28 tb 49 tdo 70 a9 8 d11 29 tb 50 tdi 71 a8 9 d10 30 rb 51 tms 72 a7 10 d9 31 v ss 52 v ss 73 v dd 11 v ss 32 v dd 53 v dd 74 v ss 12 v dd 33 rb 54 tck 75 24 mhz 13 d8 34 teract 55 dmar 76 a6 14 d7 35 ready 56 dmag 77 a5 15 d6 36 ssysf 57 dmack 78 a4 16 d5 37 rta4 58 msg_ int 79 a3 17 d4 38 rta3 59 yf_ int 80 a2 18 d3 39 rta2 60 autoen 81 a1 19 d2 40 rta1 61 romen 82 a0 20 d1 41 rta0 62 cs 83 rwr 21 d0 42 rtpty 63 rd/ wr 84 rrd figure 2. terminal connections - continued.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 17 dscc form 2234 apr 97 device type all case outline z terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol terminal number terminal symbol 1 v ss 28 nc 55 nc 82 v ss 109 a9 2 rcs 29 nc 56 nc 83 v dd 110 a8 3 tclk 30 d2 57 ssysf 84 tck 111 nc 4 dtack 31 d1 58 rta4 85 dmar 112 nc 5 nc 32 d0 59 rta3 86 dmag 113 nc 6 nc 33 v ss 60 rta2 87 nc 114 a7 7 d15 34 v dd 61 nc 88 nc 115 v dd 8 d14 35 timerona 62 nc 89 nc 116 v ss 9 d13 36 ta 63 rta1 90 dmack 117 24 mhz 10 d12 37 ta 64 rta0 91 msg_ int 118 a6 11 d11 38 ra 65 rtpty 92 yf_ int 119 a5 12 nc 39 nc 66 v dd 93 autoen 120 nc 13 nc 40 nc 67 v ss 94 nc 121 nc 14 nc 41 ra 68 lock 95 nc 122 nc 15 d10 42 timeronb 69 a/ b std 96 romen 123 a4 16 v ss 43 tb 70 nc 97 cs 124 a3 17 v dd 44 tb 71 nc 98 rd/ wr 125 a2 18 d9 45 nc 72 nc 99 v ss 126 a1 19 d8 46 nc 73 msel1 100 v dd 127 nc 20 d7 47 nc 74 msel0 101 a15 128 nc 21 nc 48 rb 75 mrst 102 a14 129 a0 22 nc 49 v ss 76 nc 103 a13 130 rwr 23 nc 50 v dd 77 nc 104 nc 131 rrd 24 d6 51 rb 78 trst 105 nc 132 v dd 25 d5 52 teract 79 tdo 106 a12 26 d4 53 ready 80 tdi 107 a11 27 d3 54 nc 81 tms 108 a10 nc = no connection figure 2. terminal connections - continued.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 18 dscc form 2234 apr 97 figure 3. block diagram .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 19 dscc form 2234 apr 97 device types 02 and 04 instruction name instruction code bypass 1111 sample/preload 0010 extest 0000 intest 0001 runbist 0111 idcode 0100 gl -tristate 0011 internal -scan 0101 private 0110 user -selectable 1000 ? 1110 device type 03 instruction name instruction code bypass 1111 sample/preload 0010 extest 0000 figure 4. boundary scan instruction codes .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 20 dscc form 2234 apr 97 figure 5. register write . figure 6. register read .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 21 dscc form 2234 apr 97 note: the memory read and write timing diagrams are applicable for re ads and writes resulting from the auto -initialization sequence. figure 7. memory write . note: the memory read and write timing diagrams are applicable for reads and writes resulting from the auto -initialization sequence. figure 8. memory read .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level g sheet 22 dscc form 2234 apr 97 figure 9. dma timing . figure 10. power -up master reset .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level e sheet 23 dscc form 2234 apr 97 figure 11. biphase timing . notes: v switch = (v ol max + v ol min)/2 c l = 35 pf figure 12. ac test circuit .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level g sheet 24 dscc form 2234 apr 97 figure 13. jtag timing waveforms . case outline open v dd = 5 v 0.5 v ground x a1, a2, a3, a4, a5, a6, a7, a8, a9, a10, b1, b2, b3, b4, b5, b7, b8, b9, b10, b11, c1, c7, d1, d2, d10, d11, e1, e2, e11, f1, f2, f11, g1, g2, g3, g9, h1, h2, j1, j2, k1, k2, k3, k5, k6, k7, l1, l2, l4, l7 a11, c2, c6, c11, e3, e9, f9, g10, h10, j5, k4, k9, k10, k11, l6, l8, l9 b6, c5, c10, e10, f3, f10, g11, h11, j6, j7, j10, j11, k8, l3, l5, l10, l11 y 1, 3, 4, 5, 6, 7, 8, 9, 10, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 27, 28, 29, 34, 35, 49, 55, 57, 58, 59, 61, 64, 65, 66, 67, 68, 69, 70, 71, 72, 76, 77, 78, 79, 80, 81, 82, 83, 84 2, 12, 26, 32, 33, 37, 39, 41, 43, 45, 47, 50, 53, 54, 60, 63, 73 11, 25, 30, 31, 36, 38, 40, 42, 44, 46, 48, 51, 52, 56, 62, 74, 75 z 2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 35, 36, 37, 39, 40, 42, 43, 44, 45, 46, 47, 52, 53, 54, 55, 56, 61, 62, 70, 71, 72, 76, 77, 79, 85, 87, 88, 89, 90, 91, 92, 94, 95, 96, 101, 102, 103, 104, 105, 106, 107, 108, 109, 110, 111, 112, 113, 114, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131 3, 17, 34, 41, 50, 51, 58, 60, 64, 66, 68, 73, 75, 80, 83, 84, 93, 98, 100, 115, 132 1, 16, 33, 38, 48, 49, 57, 59, 63, 65, 67, 69, 74, 78, 81, 82, 86, 97, 99, 116, 117 note: each pin except b6, c6, e3, f3, f9, f10, j6, and l6 for case outline x (11, 12, 31, 32, 52, 53, 73, and 74 for case outline y; and 1, 16, 17, 33, 34, 49, 50, 66, 67, 82, 83, 99, 100, 115, 116, and 132 for case outline z) will have a resistor of 2.49 k w 5% for irradiation testing. figure 14. radiation exposure connections .
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 25 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes q and v, sampling and inspection procedures shall be in accordance with mil -prf -38535 or as modified in the device manufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. for device class m, screening shall be in accordance with method 5004 of mil -std -883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device class m . a. burn -in te st, method 1015 of mil -std -883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) t a = +125 c, minimum. b. interim and final electrical test parameters shall be as specified in table iia herein. 4.2.2 additional criteria for device classes q and v . a. the burn -in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf-38535. the burn -in test circuit shall be maintained under document revision level control of the device manufacturer's technology review board (trb) in accordance with mil -prf -38535 and shall be made available to the acquiring or preparing activity upon requ est. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameters shall be as specified in table iia herein. c. additional screening for device class v beyond the requirements of device class q shall be as specified in mil -prf -38535, appendix b. 4.3 qualification inspection for device classes q and v . qualification inspection for device classes q and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4 conformance inspection . technology conformance inspection for classes q and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified herein. quality conformance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. inspections to be performed for device class m shall be those specified in method 5005 of mil -std -883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.4). 4.4.1 group a inspection . a. tests shall be as specified in table iia herein. b. for device class m, subgroups 7 and 8 tests shall be sufficient to verify the functionality of the device. for device classes q and v, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with mil -std -883, test method 5012 (see 1.5 herein). c. subgroup 4 (c in , c out , and c i/o measurements) shall be measured only for the initial test and after process or design changes which may affect input capacitance. a minimum sample of 5 devices with zero failures shall be required.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 26 dscc form 2234 apr 97 table iia. electrical test requirements . subgroups (in accordance with mil-std-883, method 5005, table i) subgroups (in accordance with mil-prf-38535, table iii) test requirements device class m device class q device class v interim electrical parameters (see 4.2) --- 1 1 final electrical parameters (see 4.2) 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 1 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 3 / group a test requirements (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group c end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group d end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 group e end-point electrical parameters (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 1 / pda applies to subgroup 1. 2 / pda applies to subgroups 1 and 7. 3 / delta limits, as specified in table iib herein, shall be required w hen specified and the delta values shall be completed with reference to the zero hour electrical parameters. table iib. burn -in and operating life test, delta parameters (+25 c) . parameter symbol delta limits quiescent current q idd 10% of measured values or 35 m a whichever is greater note: if the device is tested at or below 35 m a, no deltas are required. 4.4.2 group c inspection . the group c inspection end -point electrical parameters shall be as specified in table iia herein. 4.4.2.1 additional criteria for device class m . steady -state life test conditions, method 1005 of mil -std -883: a. test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil -std -883.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -500 0 revision level e sheet 27 dscc form 2234 apr 97 4.4.2.2 additional criteria for device classes q and v . the steady -state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's qm plan in accordance with mil -prf -38535. the test circuit shall be maintained under document revision level control by the device manufacturer's trb in accordance with mil -prf -38535 and shall be made available to t he acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil -std -883. 4.4.3 group d inspection . the group d inspection end -point electrical parameters shall be as specified in table iia herein. 4.4.4 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). rha levels for device classes m, q and v shall be as specified in mil-prf-38535. end -point electrical parameters shall be as specified in table iia herein. 4.4.4.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883 method 1019 and as specified herein. 4.4.4.1.1 accelerated aging test . accelerated aging tests shall be performed on all devices requiring a rha level greater than 5k rads(si). the post-anneal end-point electrical parameter limits shall be as specified in table ia herein and shall be the pre-irradiation end-point electrical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes which may affect the rha response of the device. 4.4.4.2 dose rate induced latchup testing . dose rate induced latchup testing shall be performed in accordance with test method 1020 of mil-std-883 and as specified herein (see 1.4). tests shall be performed on devices, sec, or approved test structures at technology qualification and after any design or process changes which may effect the rha capability of the process. 4.4.4.3 dose rate upset testing . dose rate upset testing shall be performed in accordance with test method 1021 of mil -std -883 and herein (se e 1.4). a. transient dose rate upset testing shall be performed at initial qualification and after any design or process changes which may effect the rha performance of the devices. test 10 devices with 0 defects unless otherwise specified. b. trans ient dose rate upset testing for class q and v devices shall be performed as specified by a trb approved radiation hardness assurance plan and mil -prf -38535. 4.4.4.4 single event phenomena (sep) . sep testing shall be required on class v devices (see 1.4). sep testing shall be performed on the standard evaluation circuit (sec) or alternate sep test vehicle as approved by the qualifying activity at initial qualification and after any design or process changes which may affect the upset or latchup characteristics. the recommended test conditions for sep are as follows: a. the ion beam angle of incidence shall be between normal to the die surface and 60 to the normal, inclusive (i.e. 0 angle 60 ). no shadowing of the ion beam due to fixturing or package related effects is allowed. b. the fluence shall be 3 100 errors or 3 10 6 ions/cm 2 . c. the flux shall be between 10 2 and 10 5 ions/cm 2 /s. the cross-section shall be verified to be flux independent by measuring the cross-section at two flux rates which differ by at least an order of magnitude. d. the particle range shall be 3 20 microns in silicon. e. the test temperature shall be +25 c and the maximum rated operating temperature 10 c. f. bias conditions shall be defined by the manufacturer for latchu p measurements. g. test four devices with zero failures.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -500 0 revision level e sheet 28 dscc form 2234 apr 97 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes q and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will replace the same generic device covered by a contractor -prepared specification or drawing. 6.1.2 substitutability . device class q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform defense supply center columbus when a system application requires configuration control and which smd's are applicable to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) should contact dscc-va, telephone (614) 692-0544. 6.4 comments . comments on this drawing should be directed to dscc-va , columbus, ohio 43216-5000, or telephone (614) 692 -0674. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil -prf -38535, mil -hdbk -1331, and table iii herein. 6.6 sources of supply . 6.6.1 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml -38535. the vendors listed in qml -38535 have submitted a certificate of compliance (see 3.6 herein) to dscc -va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for class m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc -va. 6.7 additional information . a copy of the following additional data shall be maintained and available from the device manufacturer: a. rha upset levels. b. test conditions (sep). c. number of upsets (sep). d. number of transients (sep). e. occurrence of latchup (sep).
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -500 0 revision level e sheet 29 dscc form 2234 apr 97 table iii. pin descriptions . name type 1 / active 2 / description data bus d0 ttb -- bit 0 (lsb) of the bidirectional data bus. d1 ttb -- bit 1 of the bidirectional data bus. d2 ttb -- bit 2 of the bidirectional data bus. d3 ttb -- bit 3 of the bidirectional data bus. d4 ttb -- bit 4 of the bidirectional data bus. d5 ttb -- bit 5 of the bidirectional data bus. d6 ttb -- bit 6 of the bidirectional data bus. d7 ttb -- bit 7 of the bidirectional data bus. d8 ttb -- bit 8 of the bidirectional data bus. d9 ttb -- bit 9 of the bidirectional data bus. d10 ttb -- bit 10 of the bidirectional data bus. d11 ttb -- bit 11 of the bidirectional data bus. d12 ttb -- bit 12 of the bidirectional data bus. d13 ttb -- bit 13 of the bidirectional data bus. d14 ttb -- bit 14 of the bidirectional data bus. d15 ttb -- bit 15 (msb) of the bidirectional data bus. address bus a0 ttb -- bit 0 (lsb) of the bidirectional address bus. a1 ttb -- bit 1 of the bidirectional address bus. a2 ttb -- bit 2 of the bidirectional address bus. a3 ttb -- bit 3 of the bidirectional address bus. a4 ttb -- bit 4 of the bidirectional address bus. a5 ttb -- bit 5 of the bidirectional address bus. a6 ttb -- bit 6 of the bidirectional address bus. a7 ttb -- bit 7 of the bidirectional address bus. a8 ttb -- bit 8 of the bidirectional address bus. a9 ttb -- bit 9 of the bidirectional address bus. a10 ttb -- bit 10 of the bidirectional address bus. a11 ttb -- bit 11 of the bidirectional address bus. a12 ttb -- bit 12 of the bidirectional address bus. a13 ttb -- bit 13 of the bidirectional address bus. a14 ttb -- bit 14 of the bidirectional address bus. a15 ttb -- bit 15 (msb) of the bidirectional address bus. see footnotes at en d of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level f sheet 30 dscc form 2234 apr 97 table iii. pin descriptions - continued. name type 1 / active 2 / description remote terminal address inputs rta0 tui -- remote terminal address bit 0. this is bit 0 of the rt address. this is the least significant bit for the rt address. rta1 tui -- remote terminal address bit 1. this is bit 1 of the rt address. rta2 tui -- remote terminal address bit 2. this is bit 2 of the rt address. rta3 tui -- remote terminal address bit 3. this is bit 3 of the rt address. rta4 tui -- remote terminal address bit 4. this is the most significant bit of the rt address. rtpty tui -- remote terminal parity. this is an odd parity input for the rt address. jtag testability pins tdo tto -- tdo. this output performs the operation of test data output as defined in the ieee standard 1149.1. this cell provides the output signal for the test access port (tap). this noninverfting output buffer is optimized for driving ttl loads. tck tui -- tck. this input performs the operation of test clock input as defined in the ieee standard 1149.1. this noninverting input buffer is optimized for driving ttl input levels. tms tui -- tms. this input performs the operation of test mode select as defined in the ieee standard 1149.1. this cell provides the input signal for the test access port (tap). this noninverting input buffer is optimized for driving ttl input levels. tdi tui -- tdi. this input performs the operation of test data in as defined in the ieee standard 1149.1. this cell provides the input signal for the test access port (tap). this noninverting input buffer is optimized for driving ttl input levels. trst tui -- trst . this input provides the reset to the tap controller as defined in the ieee standard 1149.1. this non -inverting input buffer is optimized for driving ttl input levels. when not exercising jtag, tie trst to a logical 0. biphase inputs ra ti -- receive channel a (true). this is the manchester-encoded true signal input for channel a. (quiescent low). ra ti -- receive channel a (complement). this is the manchester-encoded complement signal input for channel a. (quiescent low). rb ti -- receive channel b (true). this is the manchester-encoded true signal input for channel b. (quiescent low). rb ti -- receive channel b (complement). this is the manchester-encoded complement signal input for channel b. (quiescent low). biphase outputs ta to -- transmit channel a (true). this is the manchester-encoded true signal output for channel a. the signal is idle low. (quiescent low). ta to -- transmit channel a (complement). this is the manchester-encoded complement signal output for channel a. the signal is idle low. (quiescent low). tb to -- transmit channel b (true). this is the manchester-encoded true signal output for channel b. the signal is idle low. (quiescent low). tb to -- transmit channel b (complement). this is the manchester-encoded complement signal output for channel b. the signal is idle low. (quiescent low). see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level f sheet 31 dscc form 2234 apr 97 table iii. pin descriptions - continued. name type 1 / active 2 / description dma signals dmar tto 3 / al dma request. this signal is asserted when access to ram is required. it goes inactive upon receipt of the dmag signal. dmag ti al dma grant. once this input is received, the device is allowed to access ram. dmack tto 3 / al dma acknowledge. this signal is asserted by the device to indicate the receipt of dmag . the signal remains active until all ram bus activity is completed. dtack ti al data transfer acknowledge. this pin indicates that a data transfer is to occur and that the device may complete the memory cycle. control signals rd/ wr ti -- read/write. this indicates the direction of data flow with respect to the host. a logic high signal means the host is trying to read data from the device, and a logic low signal means the host is trying to write data to the device. cs ti al chip select. this pin selects the device when accessing the internal registers. rrd tto al ram read. this signal is generated by the device to read data from ram. rwr tto al ram write. this signal is generated by the device to write data to ram. rcs tto al ram chip select. this signal is used in conjunction with the rrd / rwr signals to access ram. autoen tui al auto enable. this pin, when active, enables automatic initialization applications. romen tto 3 / al rom enable. this pin, when active, enables the rom for automatic initialization applications. ssysf tui al subsystem fail. upon receipt, this signal propagates directly to the rt 1553 status word. 24 mhz ci -- 24 mhz clock. this 24 mhz input clock requires a 50% 10% duty cycle with an accuracy of 0.01%. mrst tui al master reset. this input pin resets the internal encoders, decoders, all register, and associated logic. msel1 ti -- mode select 1. this pin is the most significant bit for the mode select. for proper mode selection, see below: msel1 msel0 mode of operation 0 0 bus controller = sbc 0 1 remote terminal = srt 1 0 monitor terminal = smt 1 1 smt/srt msel0 ti -- mode select 0. this pin is the least significant bit for the mode select. (see msel1 for proper logic states.) see footnotes at end of table.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level g sheet 32 dscc form 2234 apr 97 table iii. pin descriptions - continued. name type 1 / active 2 / description control signals - continued. tclk ti -- timer clock. this internal timer is a 16-bit counter with a 64 m s resolution when using the 24 mhz input clock. for different applications, the user may input a clock (0-60 mhz) to establish the timer resolution. (duty cycle = 50% 10%). a/ b std tui -- military standard a or b. this pin defines whether the device will be used a mil -std -1553a or 1553b mode of operation. lock tui al lock. this pin, when set active, prevents software changes to both the rt address, a/ b std, and mode select. status signals teract to al terminal active. this output pin indicates that the terminal is actively processing a 1553 command. timerona to al timer on a. this is a 800 m s fail-safe transmitter enable timer for channel a. this ouput is reset on receipt of a new command or after 760 m s. timeronb to al timer on b. this is a 800 m s fail-safe transmitter enable timer for channel b. this ouput is reset on receipt of a new command or after 760 m s. msg_ int tto 3 / al message interrupt. this pin is active for three clock cycles (i. e., 125 ns pulse) upon the occurrence of interrupt events which are enabled. yf_ int tto 3 / al you failed interrupt. this pin is active for three clock cycles (i. e., 125 ns pulse) upon the occurrence of interrupt events which are enabled. ready to al ready. this signal indicates the device has completeed initialization or bit, and regular execution may begin. power/ground v dd -- -- +5 volt power ( 10%) v ss -- -- digital ground. 1 / to = ttl output ttb = three-state ttl bidirectional ci = cmos input tui = ttl input (internally pulled high) ti = ttl input tto = three-st ate ttl output 2 / ah = active high al = active low 3 / high impedance and active low.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 33 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 10. scope 10.1 scope . this appendix establishes minimum requirements for microcircuit die to be supplied under the qualified manufacturers list (qml) program. qml microcircuit die meeting the requirements of mil-prf-38535 and the manufacturers approved qml plan for use in monolithic microcircuits, multi chip modules (mcms), hybrids, electronic modules, or devices using chip and wire designs in accordance with mil-prf-38534 are specified herein. two product assurance classes consisting of military high reliability (device class q) and space application (device class v) are reflected in the part or identification number (pin). when available, a choice of radiation hardness assurance (rha) levels are reflected in the pin. 10.2 pin . the pin is as shown in the following example: 5962 h 92118 01 v 9 x federal rha device device die die stock class designator type class code detail designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.5) \ / (see 10.2.3) \/ drawing number 10.2.1 rha designator . device classes q and v rha identified die shall meet the mil-prf-38535 specified rha levels. a dash (-) indicates a non-rha die. 10.2.2 device type(s) . the device type(s) shall identify the circuit function as follows: device type 1 / generic number circuit function 01 ut69151 mil-std-155 3 bus controller, remote terminal, monitor interface 02 ut69151e mil-std-1553 bus controller, remote terminal, monitor interface radiation hardened 03 ut69151e mil-std-1553 bus controller, remote terminal, monitor interface 04 ut69151e mil-std-1553 bus controller, remote terminal, monitor interface radiation hardened 10.2.3 device class designator . device class device requirements documentation q or v certification and qualification to the die requirements of mil-prf-38535 10.2.4 die code . the die code designator shall be a number 9 for all devices supplied as die only with no case outline. 10.2.5. die details . the die details designation shall be a unique letter which designates the die?s physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 1 / device types 01and 03 are not available as qml die only.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 34 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 10.2.5.1 die physical dimensions . die type figure number 02 a-1 04 b-1 10.2.5.2 die bonding pad locations and electrical functions . die type figure number 02 a-1 04 b-1 10.2.5.3 interface materials . die type figure number 02 a-1 04 b-1 10.2.5.4 assembly related information . die type figure number 02 a-1 04 b-1 10.3. absolute maximum ratings . see paragraph 1.3 within the body of this drawing for details. 10.4 recommended operating conditions . see paragraph 1.4 within the body of this drawing for details. 20. applicable documents. 20.1 government specifications, standards, bulletin, and handbooks . unless otherwise specified, the following specifications, standards, bulletin, and handbook of the issue listed in that issue of the department of defense index of specifications and standards specified in the solicitation, form a part of this drawing to the extent specified herein. specification military mil -prf-38535 - integrated circuits, manufacturing, general specification for. standards military mil-std-883 - test methods and procedures for microelectronics.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 35 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 handbook military mil-hdbk-103 - list of standard microcircuit drawings (smd?s). (copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity). 20.2. order of precedence . in the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 30. requirements 30.1 item requirements . the individual item requirements for device classes q and v shall be in accordance with mil -prf -38535 and as specified herein or as modified in the device manufacturer?s quality management (qm) plan. the modification in the qm plan shall not effect the form, fit or function as described herein. 30.2 design, construction and physical dimensions . the design, construction and physical dimensions shall be as specified in mil-prf-38535 and the manufacturer?s qm plan, for device classes q and v and herein. 30.2.1 die physical dimensions . the die physical dimensions shall be as specified in 10.2.5.1 and on figures a-1 and b-1. 30.2.2 die bonding pad locations and electrical functions . the die bonding pad locations and electrical functions shall be as specified in 10.2.5.2 and on figures a-1 and b-1. 30.2.3 interface materials . the interface materials for the die shall be as specified in 10.2.5.3 and on figures a-1 and b-1. 30.2.4 assembly related information . the assembly related information shall be as specified in 10.2.5.4 and figures a-1 and b-1. 30.3 electrical performance characteristics and post-irradiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table ia of the body of this document. 30.4 electrical test requirements . the test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table ia. 30.5 marking . as a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer?s identification and the pin listed in 10.2 herein. the certification mark shall be a ?qml? or ?q? as required by mil-prf-3 8535. 30.6 certification of compliance . for device classes q and v, a certificate of compliance shall be required from a qml -38535 li sted manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). the certificate of compliance submitted to dscc-va prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer?s product meets, for device classes q and v, the requirements of mil-prf-38535 and the requirements herein. 30.7 certificate of conformance . a certificate of conformance as required for device classes q and v in mil-prf-38535 shall be provided with each lot of microcircuit die delivered to this drawing.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 36 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 40. quality assurance provisions 40.1 sampling and inspection . for device classes q and v, die sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device manufacturer?s quality management (qm) plan. the modifications in the qm plan shall not effect the form, fit or function as described herein. 40.2 screening . for device classes q and v, screening shall be in accordance with mil-prf-38535, and as defined in the manufacturer?s qm plan. as a minimum it shall consist of: a) wafer lot acceptance for class v product using the criteria defined within mil-std-883 test method 5007. b) 100% wafer probe (see par agraph 30.4). c) 100% internal visual inspection to the applicable class q or v criteria defined within mil-std-883 test method 2010 or the alternate procedures allowed within mil-std-883 test method 5004. 40.3 conformance inspection 40.3.1 group e inspection . group e inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). rha levels for device classes q and v shall be as specified in mil-prf-38535. end point electrical testing of packaged die shall be as specified in table iia herein. 50. die carrier 50.1 die carrier requirements . the requirements for the die carrier shall be accordance with the manufacturer?s qm plan or as specified in the purchase order by the acquiring activity. the die carrier shall provide adequate physical, mechanical and electrostatic protection. 60. notes 60.1 intended use . microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with mil-prf-38535 or mil-prf-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 comments . comments on this appendix should be directed to dscc-va, columbus, ohio, 43216-5000 or telephone (614) 692-0674. 60.3 abbreviations, symbols and definitions . the abbreviations, symbols, and definitions used herein are defined within mil -prf -38535 and mil-std-1331. 60.4 sources of supply for device classes q and v . sources of supply for device classes q and v are listed in qml-38535. the vendors listed within qml-38535 have submitted a certificate of compliance (see 30.6 herein) to dscc-va and have agreed to this drawing.
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 37 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions. device type 02 device type 04 die physical dimensions die size 495 mils x 495 mils 495 mils x 495 mils die thickness 17.5 1 mils 24.6 0.8 mils interface materials top metallization si al cu 9 ka ?12.5 ka tiw-alcu-tiw 6.2 ka -7.6 ka backside metallization none: backgrind none: backgrind glassivation nitride type psg oxide/nitride thickness 9 ka / 11 ka 9 ka -11 ka substrate epi on single crystal silicon epi on single crystal silicon substrate potential tied to v dd tied to gnd special assembly instructions none none
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 38 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 1 0.2173 0.2406 v dd 2 0.2110 0.2406 v ss 3 0.2047 0.2406 no connect 4 0.1984 0.2406 rcs 5 0.1921 0.2406 no connect 6 0.1858 0.2406 tclk 7 0.1795 0.2406 no connect 8 0.1732 0.2406 dtack 9 0.1669 0.2406 no connect 10 0.1606 0.2406 no connect 11 0.1543 0.2406 d15 12 0.1480 0.2406 no connect 13 0.1417 0.2406 d14 14 0.1354 0.2406 no connect 15 0.1291 0.2406 d13 16 0.1228 0.2406 no connect 17 0.1165 0.2406 v ddq 18 0.1102 0.2406 v ssq 19 0.1039 0.2406 v dd 20 0.0976 0.2406 v ss 21 0.0913 0.2406 no connect 22 0.0850 0.2406 d12 23 0.0787 0.2406 no coonect 24 0.0724 0.2406 d11 25 0.0661 0.2406 no connect 26 0.0598 0.2406 no connect 27 0.0535 0.2406 no connect 28 0.0472 0.2406 no connect 29 0.0410 0.2406 no connect 30 0.0347 0.2406 d10 31 0.0284 0.2406 no connect 32 0.0221 0.2406 d9 33 0.0158 0.2406 no connect 34 0.0095 0.2406 v ssq 35 0.0031 0.2406 v ss 36 -0.0032 0.2406 v dd 37 -0.0095 0.2406 v ddq 38 -0.0158 0.2406 no connect 39 -0.0221 0.2406 d8 40 -0.0284 0.2406 no connect note: the die center is th e coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 39 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 41 -0.0346 0.2406 d7 42 -0.0409 0.2406 no connect 43 -0.0472 0.2406 no connect 44 -0.0535 0.2406 no connect 45 -0.0598 0.2406 no connect 46 -0.0661 0.2406 no connect 47 -0.0724 0.2406 d6 48 -0.0787 0.2406 no connect 49 -0.0850 0.2406 d5 50 -0.0913 0.2406 no connect 51 -0.0976 0.2406 v ss 52 -0.1039 0.2406 v dd 53 -0.1102 0.2406 v ssq 54 -0.1165 0.2406 v dd q 55 -0.1228 0.2406 no connect 56 -0.1291 0.2406 d4 57 -0.1354 0.2406 no connect 58 -0.1417 0.2406 d3 59 -0.1480 0.2406 no connect 60 -0.1543 0.2406 no connect 61 -0.1606 0.2406 no connect 62 -0.1669 0.2406 no connect 63 -0.1732 0.2406 no connect 64 -0.1795 0.2406 d2 65 -0.1858 0.2406 no connect 66 -0.1921 0.2406 d1 67 -0.1984 0.2406 no connect 68 -0.2047 0.2406 d0 69 -0.2110 0.2406 v ss 70 -0.2173 0.2406 v dd 71 -0.2349 0.2173 v ssq 72 -0.2349 0.2110 v ddq 73 -0.2349 0.2047 timerona 74 -0.2349 0.1984 no connect 75 -0.2349 0.1921 ta 76 -0.2349 0.1858 no connect 77 -0.2349 0.1795 ta 78 -0.2349 0.1732 no connect 79 -0.2349 0.1669 ra 80 -0.2349 0.1606 no connect note: the die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 40 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 81 -0.2349 0.1543 no connect 82 -0.2349 0.1480 no connect 83 -0.2349 0.1417 ra 84 -0.2349 0.1354 no connect 85 -0.2349 0.1291 timeronb 86 -0.2349 0.1228 no connect 87 -0.2349 0.1165 v ss 88 -0.2349 0.1102 v dd 89 -0.2349 0.1039 v ssq 90 -0.2349 0.0976 v ddq 91 -0.2349 0.0913 no connect 92 -0.2349 0.0850 tb 93 -0.2349 0.0787 no connect 94 -0.2349 0.0724 tb 95 -0.2349 0.0661 no connect 96 -0.2349 0.0598 no connect 97 -0.2349 0.0535 no connect 98 -0.2349 0.0472 no connect 99 -0.2349 0.0409 no connect 100 -0.2349 0.0347 rb 101 -0.2349 0.0284 no connect 102 -0.2349 0.0221 rb 103 -0.2349 0.0158 no connect 104 -0.2349 0.0095 v ssq 105 -0.2349 0.0032 v ss 106 -0.2349 -0.0032 v dd 107 -0.2349 -0.0095 v ddq 108 -0.2349 -0.0158 no connect 109 -0.2349 -0.0221 teract 110 -0.2349 -0.0284 no connect 111 -0.2349 -0.0374 ready 112 -0.2349 -0.0409 no connect 113 -0.2349 -0.0472 no connect 114 -0.2349 -0.0535 no connect 115 -0.2349 -0.0598 no connect 116 -0.2349 -0.0661 no connect 117 -0.2349 -0.0724 ssysf 118 -0.2349 -0.0787 no connect 119 -0.2349 -0.0850 rta4 120 -0.2349 -0.0913 no connect note: th e die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 41 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 121 -0.2349 -0.0976 v ddq 122 -0.2349 -0.1039 v ssq 123 -0.2349 -0.1102 v dd 124 -0.2349 -0.1165 v ss 125 -0.2349 -0.1228 no connect 126 -0.2349 -0.1291 rta3 127 -0.2349 -0.1354 no connect 128 -0.2349 -0.1417 rta2 129 -0.2349 -0.1480 no connect 130 -0.2349 -0.1543 no connect 131 -0.2349 -0.1606 no connect 132 -0.2349 -0.1669 no connect 133 -0.2349 -0.1732 no connect 134 -0.2349 -0.1795 rta1 135 -0.2349 -0.1858 no connect 136 -0.2349 -0.1921 rta0 137 -0.2349 -0.1984 no connect 138 -0.2349 -0.2047 rtpty 139 -0.2349 -0.2110 v ddq 140 -0.2349 -0.2173 v ssq 141 -0.2173 -0.2406 v dd 142 -0.2110 -0.2406 v ss 143 -0.2047 -0.2406 lock 144 -0.1984 -0.2406 no connect 145 -0.1921 -0.2406 a/ b std 146 -0.1858 -0.2406 no connect 147 -0.1795 -0.2406 no connect 148 -0.1732 -0.2406 no connect 149 -0.1669 -0.2406 no connect 150 -0.1606 -0.2406 no connect 151 -0.1543 -0.2406 msel1 152 -0.1480 -0.2406 no connect 153 -0.1417 -0.2406 msel0 154 -0.1354 -0.2406 no connect 155 -0.1291 -0.2406 mrst 156 -0.1228 -0.2406 no connect 157 -0.1165 -0.2406 v ddq 158 -0.1102 -0.2406 v ssq 159 -0.1039 -0.2406 v dd 160 -0.0976 -0.2406 v ss note: the die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 42 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 161 -0.0913 -0.2406 no connect 162 -0.0850 -0.2406 no connect 163 -0.0787 -0.2406 no connect 164 -0.0724 -0.2406 no connect 165 -0.0661 -0.2406 no connect 166 -0.0598 -0.2406 no connect 167 -0.0535 -0.2406 no connect 168 -0.0472 -0.2406 no connect 169 -0.0409 -0.2406 trs 170 -0.0347 -0.2406 tdo 171 -0.0284 -0.2406 tdi 172 -0.0221 -0.2406 tms 173 -0.0158 -0.2406 tck 174 -0.0095 -0.2406 v ddq 175 -0.0032 -0.2406 v dd 176 0.0032 -0.2406 v ss 177 0.0095 -0.2406 v ss q 178 0.0158 -0.2406 no connect 179 0.0221 -0.2406 dmar 180 0.0284 -0.2406 no connect 181 0.0347 -0.2406 dmag 182 0.0409 -0.2406 no connect 183 0.0472 -0.2406 no connect 184 0.0535 -0.2406 no connect 185 0.0598 -0.2406 no connect 186 0.0661 -0.2406 no connect 187 0.0724 -0.2406 dmack 188 0.0787 -0.2406 no connect 189 0.0850 -0.2406 msg_ int 190 0.0913 -0.2406 no connect 191 0.0976 -0.2406 v ss 192 0.1039 -0.2406 v dd 193 0.1102 -0.2406 v ss q 194 0.1165 -0.2406 v ddq 195 0.1228 -0.2406 no connect 196 0.1291 -0.2406 yf_ int 197 0.1354 -0.2406 no connect 198 0.1417 -0.2406 autoen 199 0.1480 -0.2406 no connect 200 0.1543 -0.2406 no connect note: the die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 43 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 201 0.1606 -0.2406 no connect 202 0.1669 -0.2406 no connect 203 0.1732 -0.2406 no connect 204 0.1795 -0.2406 romen 205 0.1858 -0.2406 no connect 206 0.1921 -0.2406 cs 207 0.1984 -0.2406 no connect 208 0.2047 -0.2406 rd/ wr 209 0.2110 -0.2406 v ss 210 0.2173 -0.2406 v dd 211 0.2349 -0.2173 v ssq 212 0.2349 -0.2110 v ddq 213 0.2349 -0.2047 a15 214 0.2349 -0.1984 no connect 215 0.2349 -0.1921 a14 216 0.2349 -0.1858 no connect 217 0.2349 -0.1795 a13 218 0.2349 -0.1732 no connect 219 0.2349 -0.1669 no conn ect 220 0.2349 -0.1606 no connect 221 0.2349 -0.1543 a12 222 0.2349 -0.1480 no connect 223 0.2349 -0.1417 a11 224 0.2349 -0.1354 no connect 225 0.2349 -0.1291 a10 226 0.2349 -0.1228 no connect 227 0.2349 -0.1165 v ss 228 0.2349 -0.1102 v dd 229 0.2349 -0.1039 v ssq 230 0.2349 -0.0976 v ddq 231 0.2349 -0.0913 no connect 232 0.2349 -0.0850 a9 233 0.2349 -0.0787 no connect 234 0.2349 -0.0724 a8 235 0.2349 -0.0661 no connect 236 0.2349 -0.0598 no connect 237 0.2349 -0.0535 no connect 238 0.2349 -0.0472 no connect 239 0.2349 -0.0409 no connect 240 0.2349 -0.0347 a7 note: the die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level h sheet 44 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 241 0.2349 -0.0284 no connect 242 0.2349 -0.0221 mhz24 243 0.2349 -0.0158 no connect 244 0.2349 -0.0095 v ddq 245 0.2349 -0.0032 v dd 246 0.2349 0.0032 v ss 247 0.2349 0.0095 v ssq 248 0.2349 0.0158 no connect 249 0.2349 0.0221 a6 250 0.2349 0.0284 no connect 251 0.2349 0.0347 a5 252 0.2349 0.0409 no connect 253 0.2349 0.0472 no connect 254 0.2349 0.0535 no connect 255 0.2349 0.0598 no connect 256 0.2349 0.0661 no connect 257 0.2349 0.0724 a4 258 0.2349 0.0787 no connect 259 0.2349 0.0850 a3 260 0.2349 0.0913 no connect 261 0.2349 0.0976 v ddq 262 0.2349 0.1039 v ssq 263 0.2349 0.1102 v dd 264 0.2349 0.1165 v ss 265 0.2349 0.1228 no connect 266 0.2349 0.1291 a2 267 0.2349 0.1354 no connect 268 0.2349 0.1417 a1 269 0.2349 0.1480 no connect 270 0.2349 0.1543 no connect 271 0.2349 0.1606 no connect 272 0.2349 0.1669 no connect 273 0.2349 0.1732 no connect 274 0.2349 0.1795 a0 275 0.2349 0.1858 no connect 276 0.2349 0.1921 rwr 277 0.2349 0.1984 no connect 278 0.2349 0.2047 rrd 279 0.2349 0.2110 v ddq 280 0.2349 0.2173 v ssq note: the die center is the coordinate origin (0,0). figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 45 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 notes: 1. die bondpad numbers are for reference only. 2. dimensions are in inches and are basic. 3. die t hickness is 0.0175 0.001. 4. die backside is as lapped. 5. the die center is the coordinate origin (0,0). 6. backside bias is v dd for device type 02. figure a-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 46 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 1 0.2173 0.2406 v dd 2 0.2110 0.2406 v ss 3 0.2047 0.2406 no connect 4 0.1984 0.2406 rcs 5 0.1921 0.2406 no connect 6 0.1858 0.2406 tclk 7 0.1795 0.2406 no connect 8 0.1732 0.2406 dtack 9 0.1669 0.2406 no connect 10 0.1606 0.2406 no connect 11 0.1543 0.2406 d15 12 0.1480 0.2406 no connect 13 0.1417 0.2406 d14 14 0.1354 0.2406 no connect 15 0.1291 0.2406 d13 16 0.1228 0.2406 no connect 17 0.1165 0.2406 v ddq 18 0.1102 0.2406 v ssq 19 0.1039 0.2406 v dd 20 0.0976 0.2406 v ss 21 0.0913 0.2406 no connect 22 0.0850 0.2406 d12 23 0.0787 0.2406 no coonect 24 0.0724 0.2406 d11 25 0.0661 0.2406 no connect 26 0.0598 0.2406 no connect 27 0.0535 0.2406 no connect 28 0.0472 0.2406 no connect 29 0.0410 0.2406 no connect 30 0.0347 0.2406 d10 31 0.0284 0.2406 no connect 32 0.0221 0.2406 d9 33 0.0158 0.2406 no connect 34 0.0095 0.2406 v ssq 35 0.0031 0.2406 v ss 36 -0.0032 0.2406 v dd 37 -0.0095 0.2406 v ddq 38 -0.0158 0.2406 no connect 39 -0.0221 0.2406 d8 40 -0.0284 0.2406 no connect note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 47 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 41 -0.0346 0.2406 d7 42 -0.0409 0.2406 n o connect 43 -0.0472 0.2406 no connect 44 -0.0535 0.2406 no connect 45 -0.0598 0.2406 no connect 46 -0.0661 0.2406 no connect 47 -0.0724 0.2406 d6 48 -0.0787 0.2406 no connect 49 -0.0850 0.2406 d5 50 -0.0913 0.2406 no connect 51 -0.0976 0.2406 v ss 52 -0.1039 0.2406 v dd 53 -0.1102 0.2406 v ssq 54 -0.1165 0.2406 v ddq 55 -0.1228 0.2406 no connect 56 -0.1291 0.2406 d4 57 -0.1354 0.2406 no connect 58 -0.1417 0.2406 d3 59 -0.1480 0.2406 no connect 60 -0.1543 0.2406 no connect 61 -0.1606 0.2406 no connect 62 -0.1669 0.2406 no connect 63 -0.1732 0.2406 no connect 64 -0.1795 0.2406 d2 65 -0.1858 0.2406 no connect 66 -0.1921 0.2406 d1 67 -0.1984 0.2406 no connect 68 -0.2047 0.2406 d0 69 -0.2110 0.2406 v ss 70 -0.2173 0.2406 v dd 71 -0.2349 0.2173 v ssq 72 -0.2349 0.2110 v ddq 73 -0.2349 0.2047 timerona 74 -0.2349 0.1984 no connect 75 -0.2349 0.1921 ta 76 -0.2349 0.1858 no connect 77 -0.2349 0.1795 ta 78 -0.2349 0.1732 no connect 79 -0.2349 0.1669 ra 80 -0.2349 0.1606 no connect note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 48 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 81 -0.2349 0.1543 no connect 82 -0.2349 0.1480 no connect 83 -0.2349 0.1417 ra 84 -0.2349 0.1354 no connect 85 -0.2349 0.1291 timeronb 86 -0.2349 0.1228 no connect 87 -0.2349 0.1165 v ss 88 -0.2349 0.1102 v dd 89 -0.2349 0.1039 v ssq 90 -0.2349 0.0976 v ddq 91 -0.2349 0.0913 no connect 92 -0.2349 0.0850 tb 93 -0.2349 0.0787 no connect 94 -0.2349 0.0724 tb 95 -0.2349 0.0661 no connect 96 -0.2349 0.0598 no connect 97 -0.2349 0.0535 no connect 98 -0.2349 0.0472 no connect 99 -0.2349 0.0409 no connect 100 -0.2349 0.0347 rb 101 -0.2349 0.0284 no connect 102 -0.2349 0.0221 rb 103 -0.2349 0.0158 no connect 104 -0.2349 0.0095 v ssq 105 -0.2349 0.0032 v ss 106 -0.2349 -0.0032 v dd 107 -0.2349 -0.0095 v ddq 108 -0.2349 -0.0158 no connect 109 -0.2349 -0.0221 teract 110 -0.2349 -0.0284 no connect 111 -0.2349 -0.0374 ready 112 -0.2349 -0.0409 no connect 113 -0.2349 -0.0472 no connect 114 -0.2349 -0.0535 no connect 115 -0.2349 -0.0598 no connect 116 -0.2349 -0.0661 no connect 117 -0.2349 -0.0724 ssysf 118 -0.2349 -0.0787 no connect 119 -0.2349 -0.0850 rta4 120 -0.2349 -0.0913 no connect note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 49 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 121 -0.2349 -0.0976 v ddq 122 -0.2349 -0.1039 v ssq 123 -0.2349 -0.1102 v dd 124 -0.2349 -0.1165 v ss 125 -0.2349 -0.1228 no connect 126 -0.2349 -0.1291 rta3 127 -0.2349 -0.1354 no connect 128 -0.2349 -0.1417 rta2 129 -0.2349 -0.1480 no connect 130 -0.2349 -0.1543 no connect 131 -0.2349 -0.1606 no connect 132 -0.2349 -0.1669 no connect 133 -0.2349 -0.1732 no connect 134 -0.2349 -0.1795 rta1 135 -0.2349 -0.1858 no connect 136 -0.2349 -0.1921 rta0 137 -0.2349 -0.1984 no connect 138 -0.2349 -0.2047 rtpty 139 -0.2349 -0.2110 v ddq 140 -0.2349 -0.2173 v ssq 141 -0.2173 -0.2406 v dd 142 -0.2110 -0.2406 v ss 143 -0.2047 -0.2406 lock 144 -0.1984 -0.2406 no connect 145 -0.1921 -0.2406 a/ b std 146 -0.1858 -0.2406 no connect 147 -0.1795 -0.2406 no connect 148 -0.1732 -0.2406 no connect 149 -0.1669 -0.2406 no connect 150 -0.1606 -0.2406 no connect 151 -0.1543 -0.2406 msel1 152 -0.1480 -0.2406 no connect 153 -0.1417 -0.2406 msel0 154 -0.1354 -0.2406 no connect 155 -0.1291 -0.2406 mrst 156 -0.1228 -0.2406 no connect 157 -0.1165 -0.2406 v ddq 158 -0.1102 -0.2406 v ssq 159 -0.1039 -0.2406 v dd 160 -0.0976 -0.2406 v ss note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 50 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 161 -0.0913 -0.2406 no connect 162 -0.0850 -0.2406 no connect 163 -0.0787 -0.2406 no connect 164 -0.0724 -0.2406 no connect 165 -0.0661 -0.2406 no connect 166 -0.0598 -0.2406 no connect 167 -0.0535 -0.2406 no connect 168 -0.0472 -0.2406 no con nect 169 -0.0409 -0.2406 trs 170 -0.0347 -0.2406 tdo 171 -0.0284 -0.2406 tdi 172 -0.0221 -0.2406 tms 173 -0.0158 -0.2406 tck 174 -0.0095 -0.2406 v ddq 175 -0.0032 -0.2406 v dd 176 0.0032 -0.2406 v ss 177 0.0095 -0.2406 v ssq 178 0.0158 -0.2406 no connect 179 0.0221 -0.2406 dmar 180 0.0284 -0.2406 no connect 181 0.0347 -0.2406 dmag 182 0.0409 -0.2406 no connect 183 0.0472 -0.2406 no connect 184 0.0535 -0.2406 no connect 185 0.0598 -0.2406 no connect 186 0.0661 -0.2406 no connect 187 0.0724 -0.2406 dmack 188 0.0787 -0.2406 no connect 189 0.0850 -0.2406 msg_ int 190 0.0913 -0.2406 no connect 191 0.0976 -0.2406 v s s 192 0.1039 -0.2406 v dd 193 0.1102 -0.2406 v ssq 194 0.1165 -0.2406 v ddq 195 0.1228 -0.2406 no connect 196 0.1291 -0.2406 yf_ int 197 0.1354 -0.2406 no connect 198 0.1417 -0.2406 autoen 199 0.1480 -0.2406 no connect 200 0.1543 -0.2406 no connect note: the die center is the coordinate origin (0,0) . figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 51 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 201 0.1606 -0.2406 no connect 202 0.1669 -0.2406 no connect 203 0.1732 -0.2406 no connect 204 0.1795 -0.2406 romen 205 0.1858 -0.2406 no connect 206 0.1921 -0.2406 cs 207 0.1984 -0.2406 no connect 208 0.2047 -0.2406 rd/ wr 209 0.2110 -0.2406 v ss 210 0.2173 -0.2406 v dd 211 0.2349 -0.2173 v ssq 212 0.2349 -0.2110 v ddq 213 0.2349 -0.2047 a15 214 0.2349 -0.1984 no connect 215 0.2349 -0.1921 a14 216 0.2349 -0.1858 no connect 217 0.2349 -0.1795 a13 218 0.2349 -0.1732 no connect 219 0.2349 -0.1669 no connect 220 0.2349 -0.1606 no connect 221 0.2349 -0.1543 a12 222 0.2349 -0.1480 no connect 223 0.2349 -0.1417 a11 224 0.2349 -0.1354 no connect 225 0.2349 -0.1291 a10 226 0.2349 -0.1228 no connect 227 0.2349 -0.1165 v ss 228 0.2349 -0.1102 v dd 229 0.2349 -0.1039 v ssq 230 0.2349 -0.0976 v ddq 231 0.2349 -0.0913 no connect 232 0.2349 -0.0850 a9 233 0.2349 -0.0787 no connect 234 0.2349 -0.0724 a8 235 0.2349 -0.0661 no connect 236 0.2349 -0.0598 no connect 237 0.2349 -0.0535 no connect 238 0.2349 -0.0472 no connect 239 0.2349 -0.0409 no connect 240 0.2349 -0.0347 a7 note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 52 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 die bonding pad locations and electrical functions pad xcenter ycenter pad name 241 0.2349 -0.0284 no connect 242 0.2349 -0.0221 mhz24 243 0.2349 -0.0158 no connect 244 0.2349 -0.0095 v ddq 245 0.2349 -0.0032 v dd 246 0.2349 0.0032 v ss 247 0.2349 0.0095 v ssq 248 0.2349 0.0158 no connect 249 0.2349 0.0221 a6 250 0.2349 0.0284 no connect 251 0.2349 0.0347 a5 252 0.2349 0.0409 no connect 253 0.2349 0.0472 no connect 254 0.2349 0.0535 no connect 255 0.2349 0.0598 no connect 256 0.2349 0.0661 no connect 257 0.2349 0.0724 a4 258 0.2349 0.0787 no connect 259 0.2349 0.0850 a3 260 0.2349 0.0913 no connect 261 0.2349 0.0976 v ddq 262 0.2349 0.1039 v ssq 263 0.2349 0.1102 v dd 264 0.2349 0.1165 v ss 265 0.2349 0.1228 no connect 266 0.2349 0.1291 a2 267 0.2349 0.1354 no connect 268 0.2349 0.1417 a1 269 0.2349 0.1480 no connect 270 0.2349 0.1543 no connect 271 0.2349 0.1606 no connect 272 0.2349 0.1669 no connect 273 0.2349 0.1732 no connect 274 0.2349 0.1795 a0 275 0.2349 0.1858 no connect 276 0.2349 0.1921 rwr 277 0.2349 0.1984 no connect 278 0.2349 0.2047 rrd 279 0.2349 0.2110 v ddq 280 0.2349 0.2173 v ssq note: the die center is the coordinate origin (0,0). figure b-1
size a 5962-92118 standard microcircuit drawing defense supply center columbus columbus, ohio 43216 -5000 revision level j sheet 53 dscc form 2234 apr 97 appendix a appendix a forms a part of smd 5962-92118 notes: 1. die bondpad numbers are for reference only. 2. dimensions are in inches and are basic. 3. die thickness is 0.0175 0.001. 4. die backside is as lapped. 5. the die center is the coordinate origin (0,0). 6. backside bias is gnd for device type 04. figure b-1
standard microcircuit drawing bulletin date: 01-03-15 approved sources of supply for smd 5962-92118 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml -38535 during the next revision. mil-hdbk-103 and qml -38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by dscc -va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml -38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9211801mxa 3 / 5962-9211801mxc 3 / 5962-9211801mya 3 / 5962-9211801myc 3 / 5962h9211802qxa 3 / 5962h9211802qxc 3 / 5962h9211802qya 3 / 5962h9211802qyc 3 / 5962h9211802qza 3 / 5962h9211802qzc 3 / 5962h9211802vxa 3 / 5962h9211802vxc 3 / 5962h9211802vya 3 / 5962h9211802vyc 3 / 5962h9211802vza 3 / 5962h9211802vzc 3 / 5962h9211802q9a 3 / 5962h9211802v9a 3 / 5962-9211803qxa 65342 ut69151egca 5962-9211803qxc 65342 ut69151egcc 5962-9211803qya 65342 ut69151ewca 5962-9211803qyc 65342 ut69151ewcc see footnotes at end of table.
standard microcircuit drawing bulletin - continued. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9211803qza 65342 ut69151efca 5962-9211803qzc 65342 ut69151efcc 5962r9211804qya 65342 ut69151ewcar 5962r9211804qyc 65342 ut69151ewccr 5962r9211804vya 65342 ut69151ewcar 5962r9211804vyc 65342 ut69151ewccr 5962r9211804q9b 65342 ut69151eq-dier 5962r9211804v9b 65342 ut69151ev-dier 5962f9211804qya 65342 ut69151ewcaf 5962f9211804qyc 65342 ut69151ewccf 5962f9211804vya 65342 ut69151ewcaf 5962f9211804vyc 65342 ut69151ewccf 5962F9211804Q9B 65342 ut69151eq-dief 5962f9211804v9b 65342 ut69151ev-dief 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed, contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / no longer availa ble from an approved source of supply. vendor cage vendor name number and address 65342 utmc microelectronics system inc. 4350 centennial boulevard colorado springs, colorado 80907 -3486 the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin.

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